Two possible solutions to the problem of nucleus growth encountered in
lateral solid-phase epitaxial growth over insulating films are discussed. A
stress field originating from the thermal expansion coefficient for Si and
SiO2 acts as the driving force behind preferential nucleation.
Utilization of underlying Si3N4 films successfully
eliminated nucleii growth at topographically irregular portions. In
addition, single crystallization of poly-Si nucleii was achieved on SOI
structures for the first time. Lateral growth speed (v [cm/s]) of 1.6 × 10
exp(−3.9/kT[eV]) was obtained during high-temperature annealing (≥1000 C
).